Thyristor
isc Thyristors
INCHANGE Semiconductor
BCR12PM-12LA
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High...
Description
isc Thyristors
INCHANGE Semiconductor
BCR12PM-12LA
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current
@Tc=113℃
600
V
600
V
12
A
ITSM Surge non-repetitive on-state current
60HZ
120
A
PG(AV) Average gate power dissipation ( over any 20 ms period ) @Tc=150℃
0.5
W
Tj
Operating junction temperature
Tstg
Storage temperature
-40~125 ℃ -40~125 ℃
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
INCHANGE Semiconductor
BCR12PM-12LA
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=25℃; Tj=150℃
VTM On-state voltage
IGT
Gate-trigger current
VGT Rth (j-c)
Gate-trigger voltage Junction to case
IT=20A
Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ
Ⅲ VD =6V;RL=6Ω;RG=330Ω
Half cycle
MIN MAX UNIT
50 2000
μA
1.6 V
30 30 mA 30 1.5 V
3.5 ℃/W
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide...
Similar Datasheet