BCR12PM-14LG

isc Thyristors INCHANGE Semiconductor BCR12PM-14LG DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=92℃ ITSM Surge non-repetitive on-state current 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX 800 800 12 UNIT V V A 120 A 0.5 W -40~150 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=20A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle MIN MAX UNIT 2000 μA 1.5 V 30 30 mA 30 1.5 V 4.0 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BCR12PM-14LG NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our p...