BT136S-600D

isc Triacs INCHANGE Semiconductor BT136S-600D DESCRIPTION ·High blocking voltage capability ·Surface-mountable package ·Low holding current for low current loads and lowest EMI at commutation. ·Triggering in all four quadrants ·Very sensitive gate ·Minimum Lot-to-Lot variations for robust device performance and reliable operation FEATURES ·General purpose motor control ·General purpose switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM IT(RMS) Repetitive peak off-state voltage RMS on-state current (full sine wave;Tmb≤107℃) Non-repetitive peak on-state current(Tj=25℃;Tp=20ms) ITSM Non-repetitive peak on-state current(Tj=25℃;Tp=16.7ms) I2t I2t for fusing tp=10ms;sine-wave pulse dIT/dt Rate of rise of on-state current Ⅰ-Ⅱ-Ⅲ IT=6A,IG=0.2A,dIG/dt=0.2A/us Ⅳ IGM VGM PGM PG(AV) Tj Tstg Peak gate current Peak gate voltage Peak gate power dissipation Average gate power dissipation Operating junction temperature Storage temperature MIN 600 4 25 27 3.1 50 10 2 5 5 0.5 125 -40~150 UNIT V A A A A2S A/us A/us A V W W ℃ ℃ isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor BT136S-600D ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V; IT= 0.1A, RL= 30Ω Ⅲ Ⅳ VTM On-state voltage IH Holding current VGT Gate trigger voltage IT= 5A IGT= 0.1A, VD= 12V VD=12V;...