BT136-800

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BT136-800/BT136-800E Triac Series Absolute maximum ratings Parameter peak repetitive off-stage voltage on-state RMS current NON repetitive surge peak on-state current critical rate of rise on-state current peak gate current average gate power dissipation storage temperature range operating junction temperature range Symbol VDRM, VRRM IT(RMS) ITSM dI/dt (Q1-3) IGM PG(AV) Tstg Tj Value 800 4 25 50 2 0.5 -40 to +150 125 Unit V A A A/µ s A W oC oC TO-220 Test condition TL 66ºC Tp=20ms, Tj=25 ºC ITM=20A, TG=0.2A Electrical characteristics ( Tj=25ºC) unless otherwise specified Parameter Symbol gate trigger current IGT gate trigger voltage hold current critical rate of rise off-state voltage on-state voltage off-state leakage current thermal resistance VGT IH dv/dt VTM IDRM Rth(j-a) Rth(j-c) Value <10 <10 <10 <25 <1.5 < 30 >50 <1.7 <0.5 60 <3.7 Unit mA mA mA mA V mA V/µ s V mA ºC/W Test condition T2+G+ T2+GT2-GT2-G+ VD=12V, IT=0.1A VD=12V, IT=0.1A VD=12V, IT=0.1A VD=12V, IT=0.1A VD=12V, IT=0.1A VD=12V, IT=0.1A VD=67%VDRM IT=5A VD=VDRM; Tj=125oC Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters fo...