BT136S-600E

isc Thyristors INCHANGE Semiconductor BT136S-600E DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 600 V 600 V 4 A 25 27 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT136S-600E ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ VTM On-state voltage IT=5A IGT Gate-trigger current Ⅰ Ⅱ VD =12V;IT=0.1A; Ⅲ Ⅳ VGT Gate-trigger voltage VD =12V;IT=0.1A; Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 0.5 mA 1.7 V 35 35 35 mA 70 1.5 V 3.7 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only...