4Q Triac. BT137-800G0T Datasheet

BT137-800G0T Triac. Datasheet pdf. Equivalent

Part BT137-800G0T
Description 4Q Triac
Feature BT137-800G0T 4Q Triac Rev.01 - 11 July 2018 Product data sheet 1. General description Planar passi.
Manufacture WeEn
Datasheet
Download BT137-800G0T Datasheet

TO-220AB BT137-800G0T 4Q Triac 13 March 2014 Product data BT137-800G0T Datasheet
BT137-800G0T 4Q Triac Rev.01 - 11 July 2018 Product data sh BT137-800G0T Datasheet
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BT137-800G0T
BT137-800G0T
4Q Triac
Rev.01 - 11 July 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended
for use in general purpose bidirectional switching and phase control applications. It is
used in applications where "high junction operating temperature capability" is required,
the maximum rated junction temperature is 150 °C.
2. Features and benefits
High blocking voltage capability
Least sensitive gate for highest noise immunity
High junction operating temperature capability
High minimum IGT for guaranteed immunity to gate noise
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
Applications subject to high temperature
General purpose motor controls
Lighting controls
Applications where only positive gate drive is avaliable
Applications where gate noise or interference may occur
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
Tj
junction temperature
ITSM
non-repetitive peak on-
state current
Symbol Parameter
Static characteristics
IGT
gate trigger current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
Conditions
full sine wave; Tmb ≤ 127 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
Min Typ
-
-
Max Unit
800 V
-
-
8
A
-
-
-
-
150 °C
65 A
Min Typ Max Unit
10 -
10 -
10 -
10 -
50
mA
50
mA
50
mA
100 mA
200 -
-
V/μs



BT137-800G0T
WeEn Semiconductors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
Simplified outline
mb
2
T2
main terminal 2
3
G
mb
T2
gate
mounting base; main terminal 2
BT137-800G0T
4Q Triac
Graphic symbol
T2
T1
G
sym051
123
6. Ordering information
Table 3. Ordering information
Type number
Package
BTA137-800G0T
Name
Description
TO-220AB plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
Version
SOT78
BT137-800G0T
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 July 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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