Gate Triac. BT138-600D Datasheet

BT138-600D Triac. Datasheet pdf. Equivalent

Part BT138-600D
Description Sensitive Gate Triac
Feature TM BT138-600D HPM Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.,LTD. Description Passivated.
Manufacture HAOPIN
Datasheet
Download BT138-600D Datasheet

isc Triacs BT138-600D FEATURES ·With TO-220 package ·Glass BT138-600D Datasheet
TO-220AB BT138-600D 4Q Triac 30 August 2013 Product data s BT138-600D Datasheet
BT138-600D 4Q Triac Rev.01 - 16 March 2018 Product data she BT138-600D Datasheet
TM BT138-600D HPM Sensitive Gate Triacs HAOPIN MICROELEC BT138-600D Datasheet
Recommendation Recommendation Datasheet BT138-600D Datasheet





BT138-600D
TM
BT138-600D
HPM
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose
bidirectional switching and phase control applications, where high sensitivity is required in all
four quadrants.
Symbol
T2
T1
Simplified outline
Pin
1
2
3
TAB
G
1 2 3 TO-220
Description
Main terminal 1 (T1)
Main terminal 2 (T2)
gate (G)
Main terminal 2 (T2)
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 600 V
On-state RMS current to 12 A
Value
600
12
95
Unit
V
A
A
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
Junction to mounting base
CONDITIONS
Full cycle
Half cycle
MIN
-
-
TYP
-
-
Rth j-a
Thermal resistance
Junction to ambient
In free air
-
60
MAX
1.5
2.0
UNIT
K/W
K/W
-
K/W
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BT138-600D
TM
BT138-600D
HPM
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
VDRM
Repetitive peak off-state
Voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive surge
peak on-statecurrent
I2t
I2t for fusing
dIT/dt
Repetitive rate of rise of
on-state current after
triggering
CONDITIONS
Full sine wave;Tmb 99
full sine wave;,
Tj =25
prior to surge
T=10ms
I = TM 20A; IG=0.2A;
DIG/dt=0.2A/ s
IGM
VGM
PGM
P G(AV )
Tstg
Tj
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
Temperature
Over any 20 ms period
t=20ms
t=16.7ms
T2+G+
T2+G-
T2-G-
T2-G+
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Value
600
12
95
105
45
UNIT
V
A
A
A
A2S
50
A/ s
50
A/ s
50
A/ s
10
A/ s
2
A
5
V
5
W
0.5
W
150
125
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT1
Gate trigger current
VD=12V; IT=0.1A
IL
Latching current
VD=12V; I = GT 0.1A
IH
Holding current
VD=12V; I = GT 0.1A
VT
On-state voltage
IT=15A
VGT
Gate trigger voltage
VD=12V;IT=0.1A
VD=VDRM;IT=0.1A;TJ=125
ID
Off-state leakage current VD=VDRM ; (max) TJ=125
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
Dynamic Characteristics
dVD/dt
tgt
Critical rate of rise of
Off-state voltage
Gate controlled turn-on
time
V = DM 67% VDRM(ma ;x) Tj=110 ;
Exponential wave form;gate open circuit
I = TM 16A;VD=V ;I DRM(max) G=0.1A;
DlG/dt=5A/ s
MIN
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
TYP MAX UNIT
1.3
5
mA
2.8
5
mA
3.2
5
mA
5.5
10
mA
-
15
mA
-
20
mA
-
15
mA
-
20
mA
-
10
mA
1.4 1.65
V
0.7
1.5
V
0.4
-
V
0.1
0.5
mA
50
-
V/ s
2
-
s
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