BT139X-600E

isc Thyristors INCHANGE Semiconductor BT139X-600E DESCRIPTION ·With TO-220F packaging ·Operating in 4 quadrants ·Very high commutation performance maximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(AV) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 16 A 140 150 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.5 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT139X-600E ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ 0.5 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=20A Ⅰ Ⅱ VD =12V;IT=0.1A; Ⅲ Ⅳ VD =12V;IT=0.1A; 1.6 V 35 35 mA 35 70 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our product...