Thyristor
isc Thyristors
INCHANGE Semiconductor
BTA04-700S
DESCRIPTION ·With TO-220 packaging ·Operating in 4 quadrants ·High co...
Description
isc Thyristors
INCHANGE Semiconductor
BTA04-700S
DESCRIPTION ·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM Repetitive peak off-state voltage
700
V
VRRM Repetitive peak reverse voltage
IT(RSM) Average on-state current
Tc=90℃
ITSM Surge non-repetitive on-state current
50HZ 60HZ
700
V
4
A
40 42
A
PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj=125℃
1
W
Tj
Operating junction temperature
-40~110 ℃
Tstg Storage temperature
-40~150 ℃
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isc Thyristors
INCHANGE Semiconductor
BTA04-700S
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current
VR=VRRM Rated; VD=VDRM Rated;
Tj=25℃ Tj=110℃
10 μA 0.75 mA
VTM On-state voltage
IGT
Gate-trigger current
VGT Rth (j-c)
Gate-trigger voltage Junction to case
IT=5.5A;tP=380μs
Ⅰ Ⅱ VD =12V;RL=33Ω; Ⅲ Ⅳ
VD =12V;RL=33Ω;
1.65 V
10
10 mA
10
10
1.5
V
4.4 ℃/W
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