BTA06-600C

SEMICONDUCTOR TECHNICAL DATA Bi-Directional Triode Thyristor Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. BTA06-600C TO-220AB Features Blocking Voltage to 600 V On-State Current Rating of 6A RMS at 100℃ Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt-1500V/us minimum at 125℃ Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt- 4.0A/ms minimum at 125℃ Internally Isolated (2500VRMS) These are Pb-Free Devices 1 23 Symbol ○ 2.T2 ▼▲ ○ 3.Gate 1.T1 ○ Absolute Maximum Ratings Symbol IT(RMS) ITSM I2t DI/DT IGM PG(AV) Tstg Tj Parameter TO-220AB RMS on-state current(full since wave) TO-220AB lns. Non repetitive surge peak on-state F=50Hz current(full cycle, Tj initial=25℃) F=60Hz I2t Value for fusing tp=10ms Critical rate of rise of on-state current IG=2XIGT,tr≤100ns F=120Hz Peak gate current tp=20us Average gate power dissipation Storage junction temperature range Operating junction temperature range TC=110℃ TC=100℃ t=20ms t=16.7ms Tj=125℃ Tj=125℃ Tj=125℃ Value 6 60 65 31 50 2 0.5 -40 to +150 -40 to +125 Unit A A A2s A/us A W ℃ 2018. 10. 15 Revision No : 0 1/5 BTA06-600C Electrical Characteristics (Tj=25℃,unless otherwise specified) SnubberlessTM and Logic Level(3 quadrants) Symbol IGT(1) VGT VGD IH(2) IL Dv / Dt(2) (Dl/dt)c(2) Test conditions VD=12V RL=30Ω VD=VDRM RL=3.3KΩTj=125...