Thyristor
isc Thyristors
INCHANGE Semiconductor
BTA16-400B
DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High co...
Description
isc Thyristors
INCHANGE Semiconductor
BTA16-400B
DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM Repetitive peak off-state voltage
400
V
VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current
400
V
@Tc=80℃
16
A
50Hz 60Hz
160 170
A
PG(AV) Average gate power dissipation ( over any 20 ms period )
0.5
W
Tj
Operating junction temperature
-40~125 ℃
Tstg Storage temperature
-40~150 ℃
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
INCHANGE Semiconductor
BTA16-400B
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM
Repetitive peak reverse current VR=VRRM Rated;
Tj=25℃
IDRM
Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃
0.01 2.0
mA
VTM On-state voltage
IGT
Gate-trigger current
VGT Gate-trigger voltage Rth (j-c) Junction to case
IT=22.5A
VD =12V;RL=33Ω VD =12V;RL=33Ω For DC
1.6 V
Ⅰ
50
Ⅱ
50
mA
Ⅲ
50
Ⅳ
100
1.5 V
2.9 ℃/W
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only...
Similar Datasheet