BTA16-700B

isc Thyristors INCHANGE Semiconductor BTA16-700B DESCRIPTION ·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 700 V VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current Tc=80℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ 700 V 16 A 160 170 A PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj=125℃ 1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA16-700B ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=22.5A；tP=380μs Ⅰ Ⅱ VD =12V;RL=33Ω; Ⅲ Ⅳ VD =12V;RL=33Ω; MIN MAX UNIT 10 μA 2 mA 1.6 V 50 50 mA 50 100 1.5 V 2.9 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a ...