BTA20-600B

isc Thyristors INCHANGE Semiconductor BTA20-600B DESCRIPTION ·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current Tc=70℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ 600 V 20 A 200 210 A PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj=125℃ 1 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA20-600B ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=28A；tP=380μs Ⅰ Ⅱ VD =12V;RL=33Ω; Ⅲ Ⅳ VD =12V;RL=33Ω; MIN MAX UNIT 10 μA 3 mA 1.7 V 50 50 mA 50 100 1.5 V 2.8 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl...