quadrant triac. BTA24-600CW Datasheet

BTA24-600CW triac. Datasheet pdf. Equivalent

Part BTA24-600CW
Description Three quadrant triac
Feature TM HPM HAOPIN MICROELECTRONICS CO.,LTD. BTA24-600CW Three quadrant triacs Description Passivated h.
Manufacture HAOPIN
Datasheet
Download BTA24-600CW Datasheet

® BTA/BTB24, BTA25, BTA26 and T25 Series 25A TRIACS SNUBBE BTA24-600CW Datasheet
isc Triacs FEATURES ·With TO-220AB insulated package ·Suitab BTA24-600CW Datasheet
TM HPM HAOPIN MICROELECTRONICS CO.,LTD. BTA24-600CW Three q BTA24-600CW Datasheet
Recommendation Recommendation Datasheet BTA24-600CW Datasheet





BTA24-600CW
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BTA24-600CW
Three quadrant triacs
Description
Passivated high commutation triacs in a plastic envelope intended for use in circuits where
high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the
full rated ms current at the maximum rated junction temperature without the aid of a snubber.
Symbol
T2
T1
Simplified outline
Pin
1
2
3
TAB
G
1 2 3 TO-220
Description
Main terminal 1 (T1)
Main terminal 2 (T2)
gate (G)
isolated
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
RMS on-state current full sine wave
Non-repetitive peak on-state current
(full cycle,Tj initial=25 )
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 600 V
On-state RMS current to 25 A
Value
600
25
260
Unit
V
A
A
SYMBOL
PARAMETER
Rth( j-c)
Junction to case(AC)
Rth( j-a)
Junction to ambient
CONDITIONS MIN TYP
-
1.7
MAX UNIT
-
/W
-
60
-
/W
http://www.haopin.com
1/5



BTA24-600CW
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BTA24-600CW
Three quadrant triacs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
V /V DSM RSM
IT(RMS)
Non repetitive surge
peak off-state voltage
RMS on-state current
CONDITIONS
tp=10ms Tj=25
Full sine wave;Tc=75
MIN
-
-
ITSM
Non repetitive surge
peak on-statecurrent
full cycle,
Tj initial= 25
F=50HZ t=20ms
-
F=60HZ t=16.7ms
-
I2t
I2t Value for fusing
Tp=10ms
-
DI/dt
Critical rate of rise of
on-state current
IG=2x I , GT tr<=100ns F=120HZ Tj=125
-
IGM
IDRM
IRRM
P G(AV)
Tstg
Tj
Peak gate current
V =V DRM
RRM
V =V DRM
RRM
Average gate power
Storage temperature
range
Operating junction
Temperature range
tp=20us Tj=125
-
Tj=25
-
Tj=125
-
Tj=125
-
-40
-40
Value
V /V DRM RRM
+100
25
UNIT
V
A
250
A
260
A
340
A2S
50
A/ s
4
A
5
A
3
mA
1
W
150
125
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT1
VD=12V; RL=33
VGT
MIN TYP MAX UNIT
I-II-III
-
-
35
mA
I-II-III
1.3
V
IL
IG=1.2 IGT
I-III
-
-
70
mA
II
-
-
80
mA
I2
H
VGD
dV/dt2
(Dv/dt)c(2)
Dynamic Characteristics
V ( TM 2)
Vto
Rd
lTM=35A tp=380 s
Threshold voltage
Dynamic resistance
IT=500mA
VD=VDRM RL=3.3K
Tj=125
-
-
I-II-III 0.2
-
VD=67%VDRM gate open;TJ=125
500
-
Without snubber;TJ=125
13
-
50
mA
-
V
-
V/ s
-
A/ms
TJ=25
TJ=125
TJ=125
-
-
1.55 V
-
-
0.85
16
V
m
http://www.haopin.com
2/5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)