Thyristor. BTA25-800CW3G Datasheet

BTA25-800CW3G Thyristor. Datasheet pdf. Equivalent

Part BTA25-800CW3G
Description Thyristor
Feature Thyristors 25A Alternistor Triac BTA25-600CW3G, BTA25-800CW3G Pb Description Designed primarily f.
Manufacture Littelfuse
Datasheet
Download BTA25-800CW3G Datasheet

Thyristors 25A Alternistor Triac BTA25-600CW3G, BTA25-800CW BTA25-800CW3G Datasheet
Recommendation Recommendation Datasheet BTA25-800CW3G Datasheet





BTA25-800CW3G
Thyristors
25A Alternistor Triac
BTA25-600CW3G, BTA25-800CW3G
Pb
Description
Designed primarily for half-wave ac control applications,
such as motor controls, heating controls and power supply
crowbar circuits.
Pin Out
1
23
3
TO-220AB
Case 221 A
Style 4
Features
• Blocking Voltage to 800 V
• On-State Current Rating
of 25 A RMS at 25°C
• Uniform Gate Trigger
Currents in Three
Quadrants
• High Immunity to dV/
dt − 500 V/µs minimum at
125°C
• Minimizes Snubber
Networks for Protection
• Industry Standard TO-
220AB Package
• High Commutating dI/
dt − 14 A/ms minimum at
125°C
• Internally Isolated (2500
VRMS)
• These are Pb−Free
Devices and are RoHS
Compliant
Functional Diagram
MT 2
MT 1
G
Additional Information
Datasheet
Resources
Samples
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 03/03/20



BTA25-800CW3G
Thyristors
25A Alternistor Triac
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
BTA25−600CW3G
BTA25−800CW3G
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms)
Peak Gate Current (TJ = 110°C, t ≤ 20μs)
Peak Gate Power (Pulse Width ≤ 20 µs, TC = 80°C)
Average Gate Power (TJ = 110°C)
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Symbol
VDRM,
VRRM
IT (RMS)
ITSM
I2t
VDSM/ VRSM
IGM
PG(AV)
PG(AV)
TJ
Tstg
Viso
Value
600
800
25
250
260
VDSM/ VRSM
+100
4.0
20
1.0
-40 to +125
-40 to +125
2500
Unit
V
A
A
A²sec
V
W
W
W
°C
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
RƟJC
RƟJA
TL
Value
2.13
60
260
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
Characteristic
TJ = 25°C
TJ = 110°C
Symbol
IDRM,
IRRM
Min
-
-
Typ
Max
Unit
-
0.005
mA
-
2.0
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Forward On-State Voltage (Note 2) (ITM = ±22.5 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±500 mA)
Latching Current (VD = 12 V, IG = 12 mA)
Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)
Gate Non−Trigger Voltage (TJ = 110°C)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Symbol
Min
Typ
Max
Unit
VTM
1.55
V
MT2(+), G(+)
2.0
35
MT2(+), G(−)
IGT
2.0
35
mA
MT2(−), G(−)
2.0
35
IH
50
mA
MT2(+), G(+)
75
MT2(+), G(−)
IL
75
mA
MT2(−), G(−)
75
MT2(+), G(+)
0.5
1.3
MT2(+), G(−)
VGT
0.5
1.3
V
MT2(−), G(−)
0.5
1.3
MT2(+), G(+)
0.2
MT2(+), G(−)
VGD
0.2
V
MT2(−), G(−)
0.2
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 03/03/20





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)