BTA26-800B

isc Thyristors INCHANGE Semiconductor BTA26-800B DESCRIPTION ·With TO-3PN packaging ·Operating in 4 quadrants ·High voltage capability;high current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Applications subject to high temperature ·Heating controls; high power motor control ·High power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) RSM average on-state current ITSM Surge non-repetitive on-state current Tc=90℃ 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) @ Tc=125℃ 800 V 800 V 25 A 250 260 A 1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA26-800B ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=25℃ Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth( j-c) Junction to case IT=35A;tP=380μs Ⅰ Ⅱ VD =12V;RL=33Ω; Ⅲ Ⅳ VD =12V;RL=33Ω; MIN MAX UNIT 5 μA 3 mA 1.55 V 50 50 mA 50 100 1.3 V 1.1 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in...