BTA60-800B

isc Triacs INCHANGE Semiconductor BTA60-800B FEATURES ·With TOP3 insulated package ·Suitables for general purpose where high surge current capability is required. Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER UNI MIN T VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RMS) RMS on-state wave)Tj=80℃ current (full sine 60 A ITSM Non-repetitive peak on-state current tp=20ms 900 A Tj Operating junction temperature -40-12 5 ℃ Tstg Storage temperature -40~15 0 ℃ PG(AV) Average gate dissipation(Tj=125℃) power 1 W Rth(j-c) Thermal resistance, junction to case 0.9 ℃ /W isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor BTA60-800B ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V; RL= 100Ω Ⅲ Ⅳ IH Holding current IGT= 0.5A, Gate Open VGT Gate trigger voltage all quadrant VD=12V; RL= 100Ω VTM On-state voltage ITM= 120A; MAX 0.02 2.0 0.02 2.0 50 UNIT mA mA 50 mA 50 90 80 mA 1.5 V 1.55 V NOTICE： ISC reserves the rights to make changes of the content herein ...