BTA208S-800B

isc Thyristors INCHANGE Semiconductor BTA208S-800B DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control、Motor control circuits ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=110℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 8 A 65 72 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ VTM On-state voltage IT=10A IGT Gate-trigger current Ⅰ VD =12V;IT=0.1A; Ⅱ Ⅲ VGT Gate-trigger voltage VD =12V;IT=0.1A; Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 500 μA 1.65 V 50 50 mA 50 1.5 V 2.0 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA208S-800B NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co...