Thyristor
isc Thyristors
INCHANGE Semiconductor
BTA312X-600D
DESCRIPTION ·With TO-220F packaging ·High operating junction temper...
Description
isc Thyristors
INCHANGE Semiconductor
BTA312X-600D
DESCRIPTION ·With TO-220F packaging ·High operating junction temperature ·Very high commutation performancemaximized at each
gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average on-state current ITSM Surge non-repetitive on-state current
50HZ 60HZ
PG(AV) Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
MIN
UNIT
600
V
600
V
12
A
95 105
A
0.5
W
-40~150 ℃ -40~150 ℃
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isc Thyristors
INCHANGE Semiconductor
BTA312X-600D
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current
VR=VRRM Rated; VD=VDRM Rated;
Tj=125℃
0.5 mA
VTM On-state voltage
IGT
Gate-trigger current
VGT Gate-trigger voltage
IT=15A
Ⅰ
VD =12V;IT=0.1A;
Ⅱ
Ⅲ
VD =12V;IT=0.1A;
1.6 V
5 5 mA 5 1.5 V
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented...
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