Thyristor
isc Thyristors
INCHANGE Semiconductor
BTA330X-800BT
DESCRIPTION ·With TO-3PN packaging ·Can be operated in 3 quadrants...
Description
isc Thyristors
INCHANGE Semiconductor
BTA330X-800BT
DESCRIPTION ·With TO-3PN packaging ·Can be operated in 3 quadrants ·High voltage capability;high current capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Applications subject to high temperature ·Heating controls; high power motor control ·High power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM Repetitive peak off-state voltage
800
V
VRRM Repetitive peak reverse voltage
IT(RSM) RSM average on-state current ITSM Surge non-repetitive on-state current
Tc=44℃
50HZ 60HZ
PG(AV) Average gate power dissipation ( over any 20 ms period ) @ Tc=125℃
800
V
30
A
270 297
A
0.5
W
Tj
Operating junction temperature
Tstg Storage temperature
-40~150 ℃ -40~150 ℃
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isc Thyristors
INCHANGE Semiconductor
BTA330X-800BT
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current
VR=VRRM Rated; Tj=25℃
IDRM
Repetitive peak off-state current
VD=VDRM Rated; Tj=125℃
VTM On-state voltage
IGT
Gate-trigger current
VGT Gate-trigger voltage Rth( j-c) Junction to case
IT=42A;tP=380μs
Ⅰ
VD =12V;IT=0.1A;
Ⅱ
Ⅲ
VD =12V;IT=0.1A;
MIN MAX UNIT
5 μA 3 mA
1.55 V 50 50 mA 50 1.3 V 2.8 ℃/W
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification....
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