BTA445Z-800BT

isc Thyristors INCHANGE Semiconductor BTA445Z-800BT DESCRIPTION ·With TO-3PN packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current Tc=105℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj=125℃ 800 V 800 V 45 A 450 495 A 1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA445Z-800BT ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=125℃ 10 μA 2 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=63.6A Ⅰ Ⅱ VD =12V;IT=0.1A Ⅲ Ⅳ VD =12V;IT=0.1A 1.7 V 50 50 mA 50 70 1.3 V 0.9 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only ...