BTB08-600SWRG

isc Thyristors INCHANGE Semiconductor BTB08-600SWRG DESCRIPTION ·With TO-220 packaging ·Can be operated in 3 quadrants ·Advanced technology to provide customers with high commutation performances ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(AV) Average on-state current Tc=110℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ 8 A 80 84 A PG(AV) Average gate power dissipation ( over any 20 ms period ) @ Tc=125℃ 1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTB08-600SWRG ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated; Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=125℃ 5 μA 3 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth( j-c) Junction to case IT=11A；tP=380μs Ⅰ VD =12V;RL=30Ω; Ⅱ Ⅲ VD =12V;RL=30Ω; 1.55 V 10 10 mA 10 1.3 V 1.6 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guid...