CLA80MT1200NHR

isc Thyristors DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz INCHANGE Semiconductor CLA80MT1200NHR ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave ) PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature @Tc=100℃ 50HZ 60HZ MIN UNIT 1200 V 1200 V 40 A 88 A 520 560 A 0.5 W -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor CLA80MT1200NHR ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ 0.01 2 mA VTM On-state voltage ITM= 40A 1.3 V IGT Gate-trigger current VD = 6V 70 mA VGT Gate-trigger voltage VD = 6V 1.7 V Rth(j-c) Thermal resistance Junction to case 0.65 ℃/W NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide...