Thyristors. MAC210A8 Datasheet

MAC210A8 Thyristors. Datasheet pdf. Equivalent

Part MAC210A8
Description Thyristors
Feature Thyristors Surface Mount – 400V - 800V > MAC210A8, MAC210A10 MAC210A8, MAC210A10 Pb Pin Out Desc.
Manufacture Littelfuse
Datasheet
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MAC210A8
Thyristors
Surface Mount – 400V - 800V > MAC210A8, MAC210A10
MAC210A8, MAC210A10
Pb
Pin Out
Description
Designed primarily for full-wave AC control applications,
such as light dimmers, motor controls, heating controls
and power supplies; or wherever full−wave silicon gate
controlled solid−state devices are needed. Triac type
thyristors switch from a blocking to a conducting state
for either polarity of applied main terminal voltage with
positive or negative gate triggering.
Features
• Blocking Voltage to 600
Volts
• All Diffused and Glass
Passivated Junctions
for Greater Parameter
Uniformity and Stability
• Small, Rugged,
Thermowatt Construction
for Low Thermal
Resistance, High Heat
Dissipation and Durability
• Gate Triggering
Guaranteed in Four
Modes (Quadrants)
• Pb−Free Packages are
Available
Functional Diagram
MT 2
MT 1
G
CASE 221A
STYLE 4
1
2
Additional Information
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/25/19



MAC210A8
Thyristors
Surface Mount – 400V - 800V > MAC210A8, MAC210A10
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC210A8
VDRM,
600
MAC210A10
VRRM
800
V
On-State RMS Current (Full Cycle Sine Wave, 50 to 60 Hz, TC = 70°C)
IT (RMS)
10
A
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, Tc = +25°C)
Preceded and followed by rated current
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40
A²sec
Peak Gate Power
(TC = +80°C, Pulse Width = 1.0 µs)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Peak Gate Current (TC = +70°C, Pulse Width = 10 s)
Operating Junction Temperature Range
Storage Temperature Range
PGM
20
W
PG (AV)
0.35
W
IGM
2.0
A
TJ
-40 to +125
°C
Tstg
-40 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
RƟJC
RƟJA
TL
Value
2.0
62.5
260
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
Characteristic
TJ = 25°C
TJ = 125°C
Symbol
Min
Typ
Max
Unit
IDRM,
-
IRRM
-
-
1.0
mA
-
2.0
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Peak On−State Voltage (TM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
VTM
1.6
MT2(+), G(+)
12
50
Gate Trigger Current
(Continuous dc)
(VD = 12 V, RL = 100 Ohms)
MT2(+), G(−)
12
50
MT2(−), G(−)
IGT
20
50
MT2(−), G(+)
35
75
Gate Trigger Voltage
(Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
0.9
2.0
MT2(+), G(−)
0.9
2.0
MT2(−), G(−)
VGT
1.1
2.0
MT2(−), G(+)
1.4
2.5
Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = ±150 mA))
Turn-On Time (Rated VDRM, ITM = 14 A)
(IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s)
IH
6.0
50
tgt
1.5
Unit
V
mA
V
mA
μs
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/25/19





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