Q6006DH4

isc Thyristors Q6006DH4 DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 6 A 85 80 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage IT=6A IGT Gate-trigger current Ⅰ VD =12V;IT=0.1A; Ⅱ Ⅲ VGT Gate-trigger voltage VD =12V;IT=0.1A; Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 0.01 0.5 mA 2 1.6 V 35 35 mA 35 1.3 V 2.4 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors Q6006DH4 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications ...