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Q6025L6

INCHANGE

Thyristor

isc Thyristors INCHANGE Semiconductor Q6025L6 DESCRIPTION ·With TO-220ins packaging ·A triac is a solid state silicon ...


INCHANGE

Q6025L6

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Description
isc Thyristors INCHANGE Semiconductor Q6025L6 DESCRIPTION ·With TO-220ins packaging ·A triac is a solid state silicon ·AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) RMS on-state current @Tc=100℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ Tj Operating junction temperature Tstg Storage temperature MIN UNIT 600 V 600 V 20 A 208 250 A -40~125 ℃ -40~125 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive current peak reverse VR=VRRM Rated; IDRM Repetitive current peak off-state VD=VDRM Rated; Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage Ⅰ IGT Gate-trigger current VD =12V;RL=30Ω; Ⅱ Ⅲ VGT Gate-trigger voltage VD =12V;RL=30Ω; MIN MAX UNIT 0.05 0.5 mA 2 1.8 V 80 80 mA 80 2.5 V isc website:www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products...




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