T1210T-8T

isc Thyristors INCHANGE Semiconductor T1210T-8T APPLICATIONS ·With TO-220AB package. ·General purpose AC line load switching ·Motor control circuits ·Small home appliances ·Lighting ·Inrush current limiting circuits ·Overvoltage crowbar protection ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage @Tj=125℃ @Tj=150℃ @Tj=125℃ @Tj=150℃ IT(RMS) RMS on-state current @Tc=131℃ ITSM Surge non-repetitive on-state current F=50HZ；t=20ms F=60HZ;16.7ms PG(AV) Average gate power dissipation @Tj=150℃ Tj Operating junction temperature Tstg Storage temperature MIN UNIT 800 600 V 800 600 V 12 A 90 95 A 1 W -40~150 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor T1210T-8T ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ Tj=150℃ Tj=25℃ Tj=125℃ Tj=150℃ VTM On-state voltage ITM= 17A；tp=380μs Gate-trigger current （ minimum IGT IGT is guaranted at 5% of IGT VD = 12 V;RL=30Ω max）Quadrant(I - II - III) VGT Gate-trigger voltage Quadrant (I - II - III) VD = 12 V;RL=30Ω MIN MAX UNIT 7.5 μA 1.0 mA 2.7 mA 7.5 μA 1.0 mA 2.7 mA 1.55 V 35 mA 1.0 V SYMBOL PARAMETER Rth(j-c) Thermal res...