Thyristor
isc Thyristors
INCHANGE Semiconductor
T1610-800G-TR
APPLICATIONS ·With TO-263 package. ·Be suitable for general purpos...
Description
isc Thyristors
INCHANGE Semiconductor
T1610-800G-TR
APPLICATIONS ·With TO-263 package. ·Be suitable for general purpose AC switching,they can be
used as an ON/OFF function in applications. ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM IT(RMS) ITSM PG(AV)
Repetitive peak reverse voltage
RMS on-state current
@Tc=100℃
Surge non-repetitive on-state current
F=50HZ;t=20ms F=60HZ;16.7ms
Average gate power dissipation
@Tj=125℃
Tj
Operating junction temperature
Tstg Storage temperature
MIN
800
800 16 160 168 1 -40~125 -40~150
UNIT
V V A A W ℃ ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM
Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃
VTM On-state voltage
ITM= 22.5A;tp=380μs
Gate-trigger current ( minimum
IGT
IGT is guaranted at 5% of IGT VD = 12 V;RL=30Ω
max)Quadrant(I - II - III)
VGT
Gate-trigger voltage Quadrant (I - II - III)
VD = 12 V;RL=30Ω
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
5 μA 2 mA 5 μA 2 mA 1.55 V
10 mA
1.3 V 1.2 ℃/W
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
INCHANGE Semiconductor
T1610-800G-TR
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informa...
Similar Datasheet