T1635T-8I

isc Thyristors INCHANGE Semiconductor T1635T-8I DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VDRM Repetitive peak off-state voltage @Tc=125℃ 800 VRRM IT(RSM) Repetitive peak reverse voltage Average on-state current ITSM Surge non-repetitive on-state current @Tc=125℃ 800 @Tc=108℃ 16 Tc=119℃ 12 50Hz 120 60Hz 126 PG(AV) Average gate power dissipation ( over any 20 ms period ) 1 Tj Operating junction temperature -40~150 Tstg Storage temperature -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=22.6A Ⅰ VD =12V;RL=30Ω Ⅱ Ⅲ VD =12V;RL=30Ω Rth (j-c) Junction to case For DC MIN MAX UNIT 5 μA 1 mA 1.55 V 35 35 mA 35 1.3 V 2.1 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor T1635T-8I NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presente...