Triac. TIC216 Datasheet

TIC216 Triac. Datasheet pdf. Equivalent

Part TIC216
Description Triac
Feature isc Triacs INCHANGE Semiconductor TIC216series DESCRIPTION ·Sensitive Gate Triacs ·6A RMS ·Glass p.
Manufacture INCHANGE
Datasheet
Download TIC216 Datasheet

TIC216 SERIES SILICON TRIACS Copyright © 1997, Power Innovat TIC216 Datasheet
isc Triacs INCHANGE Semiconductor TIC216series DESCRIPTION TIC216 Datasheet
SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216A Datasheet
SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216B Datasheet
www.DataSheet4U.com TIC216 SERIES SILICON TRIACS ● ● ● ● ● TIC216D Datasheet
SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216D Datasheet
isc Triacs TIC216D FEATURES ·With TO-220 package ·Sensitiv TIC216D Datasheet
www.DataSheet4U.com TIC216 SERIES SILICON TRIACS ● ● ● ● ● TIC216M Datasheet
SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216M Datasheet
isc Triacs TIC216M FEATURES ·With TO-220 package ·Sensitiv TIC216M Datasheet
Recommendation Recommendation Datasheet TIC216 Datasheet





TIC216
isc Triacs
INCHANGE Semiconductor
TIC216series
DESCRIPTION
·Sensitive Gate Triacs
·6A RMS
·Glass passivated Wafer
·400V to 800V off-state Voltage
·Max IGT of 5mA(Quadrants 1-3)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
TIC216D
400
VDRM
Repetitive
voltage
peakoff-state TIC216M
TIC216S
600
700
V
TIC216N
800
TIC216D
400
VRRM
Repetitive
voltage
peakreverse TIC216M
TIC216S
600
700
V
TIC216N
800
IT(RMS)
RMS on-state current (full sine
wave)TC=70
6
A
ITSM Non-repetitive peak on-state current
60
A
PGM Peak gate power PW200μs
2.2
W
PG(AV) Average gate power
0.9
W
Tj
Operating Junction temperature
110
Tstg Storage temperature
-40 ~+125
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TIC216
isc Triacs
INCHANGE Semiconductor
TIC216series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
MAX UNIT
2.5 /W
62.5 /W
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBO
L
PARAMETER
IRRM Repetitive peak reverse current
IDRM Repetitive peak off-state current
IGT Gate trigger current
Holding current
IH
VGT Gate trigger voltage
VTM On-state voltage
CONDITIONS
VRM=VRRM,
VRM=VRRM, Tj=110
VDM=VDRM,
VDM=VDRM, Tj=110
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
Vsupply = 12 V†, IG= 0 initial ITM= 100mA
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
IT= 8.4A; IG= 50mA
MAX UNIT
0.4
2.0
mA
0.4
2.0
mA
5
5
mA
5
10
30 mA
2.2
2.2
V
2.2
3.0
1.7 V
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