Triac. TIC226 Datasheet

TIC226 Triac. Datasheet pdf. Equivalent

Part TIC226
Description Triac
Feature isc Triacs INCHANGE Semiconductor TIC226series DESCRIPTION ·8A RMS ,70A Peak ·Glass passivated Waf.
Manufacture INCHANGE
Datasheet
Download TIC226 Datasheet

TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer TIC226 Datasheet
isc Triacs INCHANGE Semiconductor TIC226series DESCRIPTION TIC226 Datasheet
SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226A Datasheet
SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226B Datasheet
SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226C Datasheet
SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226D Datasheet
isc Triacs TIC226D FEATURES ·With TO-220 package ·Sensitiv TIC226D Datasheet
TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer TIC226D Datasheet
SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226E Datasheet
SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M Datasheet
Recommendation Recommendation Datasheet TIC226 Datasheet





TIC226
isc Triacs
INCHANGE Semiconductor
TIC226series
DESCRIPTION
·8A RMS ,70A Peak
·Glass passivated Wafer
·400V to 800V off-state Voltage
·Max IGT of 50mA(Quadrants 1-3)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
TIC226D
400
VDRM
Repetitive
voltage
peakoff-state TIC226M
TIC226S
600
700
V
TIC226N
800
TIC226D
400
VRRM
Repetitive
voltage
peakreverse TIC226M
TIC226S
600
700
V
TIC226N
800
IT(RMS)
RMS on-state current (full sine
wave)TC=85
8
A
ITSM Non-repetitive peak on-state current
70
A
PGM Peak gate power PW200μs
2.2
W
PG(AV) Average gate power
0.9
W
Tj
Operating Junction temperature
110
Tstg Storage temperature
-40 ~+125
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TIC226
isc Triacs
INCHANGE Semiconductor
TIC226series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
TYP MAX UNIT
1.8 /W
62.5 /W
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
VRM=VRRM,
VRM=VRRM, Tj=110
VDM=VDRM,
VDM=VDRM, Tj=110
IGT
Gate trigger current
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
IH
Holding current
Vsupply = 12 V†,IG= 0 initial ITM=100mA
VGT
Gate trigger voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
VTM On-state voltage
IT= 12A; IG= 50mA
TYP MAX UNIT
0.4
2.0
mA
0.4
2.0
mA
2 50
12 50
mA
9 50
20
30 mA
2
V
2.1 V
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2 isc & iscsemi is registered trademark





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