TPDV840

isc Triacs INCHANGE Semiconductor TPDV840 FEATURES ·With TOP3 insulated package ·Be suitable for general purpose where high surge current capability is required. Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RMS) ITSM Tj Repetitive peak reverse voltage RMS on-state current (full sine wave)Tc=75℃ Non-repetitive peak on-state current Operating junction temperature tp=2.5ms tp=8.3ms tp=10ms Tstg PG(AV) Storage temperature Average gate power dissipation(Tj=125℃) Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient Value UNIT 800 V 800 V 40 A 590 370 A 350 -40~125 ℃ -40~150 ℃ 1 W 1.2 ℃/W 50 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, Tj=25℃ Tj=125℃ IDRM Repetitive peak off-state current VR=VRRM, Tj=25℃ Tj=125℃ IGT Gate trigger current Quadrant (I-II-III) VD=12V; RL= 33Ω VGT Gate trigger voltage all quadrant Quadrant(I-II-III) VD=12V; RL= 33Ω VTM On-state voltage ITM= 60A; tp= 380μs MAX 0.02 8 0.02 8 200 1.5 1.8 UNIT mA mA mA V V isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor TPDV840 NOTICE： ISC reserves the rights to ...