Triac. TPDV1240RG Datasheet

TPDV1240RG Triac. Datasheet pdf. Equivalent

Part TPDV1240RG
Description Triac
Feature TPDVxx40 $ * $ $ $ * 723LQVXODWHG Features • On-state current (IT(RMS)): 40 A • Max. blocking.
Manufacture STMicroelectronics
Datasheet
Download TPDV1240RG Datasheet

TPDVxx40 $ * $ $ $ * 723LQVXODWHG Features • On-state TPDV1240RG Datasheet
isc Triacs TPDV1240RG FEATURES ·With TOP3 insulated packag TPDV1240RG Datasheet
Recommendation Recommendation Datasheet TPDV1240RG Datasheet





TPDV1240RG
TPDVxx40
$
*
$
$
$
*
723LQVXODWHG
Features
On-state current (IT(RMS)): 40 A
Max. blocking voltage (VDRM/VRRM): 1200 V
Gate current (IGT): 200 mA
Commutation at 10 V/µs: up to 142 A/ms
Noise immunity: 500 V/µs
Insulated package:
– 2,500 V rms (UL recognized: E81734)
40 A high voltage Triacs
Datasheet - production data
Description
The TPDVxx40 series use a high performance
alternistor technology. Featuring very high
commutation levels and high surge current
capability, this family is well adapted to power
control on inductive load (motor, transformer...).
Table 1. Device summary
Parameter
TPDV640RG
Blocking
voltage
VDRM/VRRM
600 V
On-state
current
IT(RMS)
Gate
current
IGT
TPDV840RG
800 V
40 A 200 mA
TPDV1240RG
1200 V
June 2015
This is information on a product in full production.
DocID18270 Rev 2
1/8
www.st.com



TPDV1240RG
Characteristics
1
Characteristics
TPDVxx40
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
IT(RMS)
ITSM
I2t
dI/dt
VDRM
VRRM
On-state rms current (180° conduction angle)
Tc = 75 °C
Non repetitive surge peak on-state
current
I2t value for fusing
tp = 2.5 ms
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 25 °C
Tj = 25 °C
Critical rate of rise of on-state current
Repetitive F = 50 Hz
IG = 500 mA; dlG/dt = 1 A/µs
Non repetitive
TPDV640
Repetitive peak off-state voltage
TPDV840
TPDV1240
Tj = 125 °C
40
590
370
350
610
20
100
600
800
1200
Tstg
Storage junction temperature range
Tj
Operating junction temperature range
-40 to +150
-40 to +125
TL
VINS(RMS)(1)
Maximum lead temperature for soldering during 10 s at 2 mm from case
Insulation rms voltage
260
2500
1. A1, A2, gate terminals to case for 1 minute
Unit
A
A
A2S
A/µs
V
°C
°C
V
Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test condition
Quadrant
Value
IGT
VGT
VD = 12 V DC, RL = 33
Max.
200
I - II - III
Max.
1.5
VGD
VD = VDRM RL = 3.3 k
Tj = 125 °C I - II - III
Min.
0.2
tgt
IH (1)
VD = VDRM IG = 500 mA dlG/dt = 3A/µs
IT = 500 mA Gate open
I - II - III
Typ.
2.5
Typ.
50
IL
IG = 1.2 x IGT
I - III
100
Typ.
II
200
dV/dt
VTM (1)
IDRM
IRRM
(dI/dt)c (1)
Linear slope up to :
VD = 67% VDRM Gate open
ITM = 56 A tp = 380 µs
VDRM = VRRM
(dV/dt)c = 200 V/µs
(dV/dt)c = 10 V/µs
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Min.
500
Max.
1.8
20
Max.
8
35
Min.
142
1. For either polarity of electrode A2 voltage with reference to electrode A1.
Unit
mA
V
V
µs
mA
mA
V/µs
V
µA
mA
A/ms
2/8
DocID18270 Rev 2





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