2SA483

isc Silicon PNP Power Transistor 2SA483 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Complement to Type 2SC783 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -150 V -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Isc Silicon PNP Power Transistor 2SA483 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.5mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -10V ICBO Collector Cutoff Current VCB= -150V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.1A ; VCE= -10V fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -10V COB Output Capacitance VCB= -10V; ftest= 1MHz MIN TYP. MAX UNIT -150 V -150 V -1.8 V -1.8 V -100 μA -100 μA 30 240 10 MHz 50 pF  hFEC...