2SA490

isc Silicon PNP Power Transistor 2SA490 DESCRIPTION ·High Collector Current:: IC= -3A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -40V(Min) ·Complement to Type 2SC790 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·10 Watts output applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA490 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -2A ; VCE= -2V ICBO Collector Cutoff Current VCB= -30V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V hFE-2 DC Current Gain IC= -2A ; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -2V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz MIN TYP. MAX UNIT -40 V -5 V -1.2...