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2SA715 Dataheets PDF



Part Number 2SA715
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SA715 Datasheet2SA715 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SA715 DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -35V (Min) ·Complement to Type 2SC1162 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -.

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isc Silicon PNP Power Transistor 2SA715 DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -35V (Min) ·Complement to Type 2SC1162 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 0.75 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1.5A ; VCE= -2V ICBO Collector Cutoff Current VCB= -35V; IE= 0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V hFE-2 DC Current Gain IC= -1.5A ; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -2V  hFE-1 Classifications B C D 60-120 100-200 160-320 2SA715 MIN TYP. MAX UNIT -35 V -35 V -5 V -1.0 V -1.5 V -20 μA 60 320 20 160 MHz isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA715 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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