2SA743A

isc Silicon PNP Power Transistor DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V (Min) ·Complement to Type 2SC1212A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 0.75 W 8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA743A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -50mA ; VCE= -4V ICER Collector Cutoff Current VCE= -80V; RBE= 1kΩ hFE-1 DC Current Gain IC= -50mA ; VCE= -4V hFE-2 DC Current Gain IC= -1A ; VCE= -4V fT Current-Gain—Bandwidth Product IC= -30mA ; VCE= -4V  hFE-1 Classifications B C 60-120 100-200 2SA743A MIN TYP. MAX UNIT -80 V ...