isc Silicon PNP Power Transistor
2SA758
DESCRIPTION ·High Power Dissipation-
: PC= 80W(Max.)@TC=25℃ ·Collector-Emitter...
isc Silicon
PNP Power
Transistor
2SA758
DESCRIPTION ·High Power Dissipation-
: PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier power output stage and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-12
A
80
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
2SA758
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
MIN TYP. MAX UNIT
-110
V
-130
V
-5
V
-1.8...