2SA808

isc Silicon PNP Power Transistor 2SA808 DESCRIPTION ·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -3 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA808 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V Switching times tr Rise Time tstg Storage Time tf Fall Time IC= -3A ,RL= 3Ω, VCC= -10V IB1= -0.3A; IB2= 50mA MIN TYP. MAX UNIT -80 V -1.5 V -1.0 mA -1.0 mA 20 10 MHz 1.2 μs 1.8 μs 0.3 μs Notice： ISC reserves the rights to make changes of the content herein the datas...