2SA1220A

isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1220 -120 VCBO Collector-Base Voltage V 2SA1220A -160 2SA1220 -120 VCEO Collector-Emitter Voltage V 2SA1220A -160 VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -5 V -1.2 A -2.5 A -0.3 A 1.2 W 20 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SA1220/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.2A ICBO Collector Cutoff Current VCB= -120V; IE= 0 -0.7 V -1.3 V -1.0 μA IEBO Emitter Cutoff Current hFE-1 DC Current Gain VEB= -3V; IC=0 IC= -5mA ; VCE= -5V -1.0 μA 35 hFE-2 DC Current Gain IC= -0.3A ; VCE= -5V 60 320 fT Current-Gain—Bandwidth Pr...