2SA1386A

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1386 -160 VCBO Collector-Base Voltage V 2SA1386A -180 2SA1386 -160 VCEO Collector-Emitter Voltage V 2SA1386A -180 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1386/A isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1386 2SA1386A IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current 2SA1386 VCB= -160V; IE= 0 2SA1386A VCB= -180V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -5A ; VCE= -4V  hFE Classifications O P Y 50-100 70-140 90-180 2SA1386/A MIN TYP. MAX UNIT -160 V -180 -2.0 V -100 μA -100 -100 μA 50 180 NOTICE： ISC reserves the rights to make changes ...