2SB337

isc Silicon PNP Power Transistors 2SB337 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.29V(Typ.) @IC= -4A ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCER Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous 7 A IB Base Current-Continuous -1 A PC Collector Power Dissipation 30 W TJ Junction Temperature 100 ℃ Tstg Storage Temperature -55~100 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SB337 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CER Collector-Emitter Breakdown Voltage IC= -0.6A（peak）; RBE= 68Ω -30 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.29 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V -0.38 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -1.0 mA hFE DC Current Gain IC= -1A; VCE= -2V 50 165  hFE Classifications A B 50-100 80-165 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applic...