2SB536

isc Silicon PNP Power Transistors 2SB536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SD381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier, low speed switching. ·Suitable for driver of 60~100 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A IB Base Current -0.3 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -5mA ; VCE= -5V hFE-2 DC Current Gain IC= -0.3A ; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 0.1MHz fT Current-Gain—Bandwidth Product IC=-0.1A; VCE= -5V 2SB536 MIN TYP. MAX UNIT -2.0 V -1.5 V -1.0 μA -1.0 μA 25 40 250 3...