2SB556

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD426 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 80W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB556 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -5V ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -2A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -2A; VCE= -5V  hFE Classifications R O 40-80 70-140 2SB556 MIN TYP. MAX ...