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2SB612

INCHANGE

PNP Transistor


Description
isc Silicon PNP Power Transistors 2SB612 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD582 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommended for 80~100W audio amplifier output stage. ABSOLUTE MAXIMU...



INCHANGE

2SB612

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