isc Silicon PNP Power Transistors
2SB656
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Hig...
isc Silicon
PNP Power
Transistors
2SB656
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·High Power Dissipation-
: PC= 125W(Max)@TC=25℃ ·Complement to Type 2SD676 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-20
A
125
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
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isc Silicon
PNP Power
Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -6A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
hFE Classifications
B
C
60-120 100-200
2SB656
MIN TYP. MAX UNIT
-160
V
-5
V
-2.5
V
-1.5
V
-0.1 mA
60
200
20
22
MHz
NOT...