2SB674

isc Silicon PNP Darlington Power Transistor 2SB674 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SD634 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 3A ; VCE= 3V hFE-2 DC Current Gain IC= 7A ; VCE= 3V 2SB674 MIN TYP. MAX UNIT 80 V 1.5 V 2.0 V 2.5 V 100 μA 2000 3.0 mA 15000 1000 NOTI...