isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -1A ·Collector-Em...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD686 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive applications. ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-DC
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-300
mA
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB676
isc website:www.iscsemi.com
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isc Silicon
PNP Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA
VBE(sat)) Base-Emitter Saturation Voltage
IC= -3A ,IB= -6mA
ICBO
Collector Cutoff Current
VCB= -100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -3A; VCE= -2V
2SB676
MIN TYP. MAX UNIT
-80
V
-1.5
V
-2.0
V
-20...