2SB713

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SD751 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -9 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB713 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.7A VBE(on) Base -Emitter On Voltage IC= -7A; VCE= -5V ICBO Collector Cutoff Current VCB= -140V; IE=0 IEBO Emitter Cutoff Current VEB= -3V; IC=0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -5A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 2SB713 MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA 20 40 200 15 20 MHz  hFE-2 Classifications R Q P 40-80 60-120 100-200 NOTICE： ISC reserves the...