2SB753

isc Silicon PNP Power Transistor 2SB753 DESCRIPTION ·High Collector Current:IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -100V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -1V hFE-2 DC Current Gain IC= -4A ; VCE= -1V  hFE-1 Classifications O Y 70-140 120-240 2SB753 MIN TYP. MAX UNIT -80 V -0.5 V -1.4 V -5 μA -5 μA 70 240 30 NOTICE： ISC reserves the rights ...